ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,181, issued on July 21, was assigned to Zebra Technologies Corp. (Lincolnshire, Ill.). "Wearable computing device accessory for mitigating ... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,182, issued on July 21, was assigned to FUJI Corp. (Chiryu, Japan). "Waste-tape transport device and mounting device" was invented by Mizuh... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,183, issued on July 21, was assigned to QUALCOMM Inc. (San Diego). "Memory with bitcell-to-periphery interface tap cell" was invented by Ch... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,184, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory device with container-shaped electrode an... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,185, issued on July 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Dynamic flash memory (DFM) with channel first... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,186, issued on July 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Structure with frontside and backside DRAMs"... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,187, issued on July 21, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Memory device and manufacturing ... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,188, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Integrated circuit device" was invented b... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,189, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,190, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "MIM memory cell with backside inter... और पढ़ें